A new method for precise evaluation of dynamic recovery of negative bias temperature instability

It has been reported that the dynamic recovery of drain current (I/sub d/) takes place soon after the stress applied on the gate is removed during a MOSFET negative bias temperature instability (NBTI) experiment. This phenomenon makes it very difficult to estimate the NBTI degradation of I/sub d/ (/spl Delta/I/sub d/) correctly. The paper presents a new characterization method in which the effect of the dynamic recovery is quantitatively taken into account to estimate /spl Delta/I/sub d/ precisely.