A method of preparing a silicon nanowire array

The present invention provides a method of preparing a silicon nanowire array, comprising: providing a lightly doped silicon substrate; sequentially epitaxially grown silicon layer of a first doping concentration doping concentration of the layer and a second silicon layer, and repeat the procedure two times; lithographically-defined pattern of silicon nanowire and a silicon nanowire support region; etching the single crystal silicon substrate and the second doping concentration of the first silicon layer; by selective etching, forming dangling silicon nanowire arrays. The method of preparation of the present invention, a silicon nanowire arrays prepared by top-down method of longitudinally aligned, compatible with conventional integrated circuit processing technology, increases the density of the silicon nanowire, thereby effectively improve the utilization efficiency of the silicon wafer, reducing the manufacturing cost, is conducive to the development of mass production can be widely applied to nano-electronic devices or sensors.