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Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
2019
Watanabe Masahiro
Shigyo Naoyuki
Hoshii Takuya
Furukawa Kazuyoshi
Kakushima Kuniyuki
Satoh Katsumi
Matsudai Tomoko
Saraya Takuya
Takakura Toshihiko
Itou Kazuo
Fukui Munetoshi
Suzuki Shinichi
Takeuchi Kiyoshi
Muneta Iriya
Wakabayashi Hitoshi
Nakajima Akira
Nishizawa Shin-ichi
Tsutsui Kazuo
Hiramoto Toshiro
Ohashi Hiromichi
Iwai Hiroshi
Keywords:
Optoelectronics
Insulated-gate bipolar transistor
Materials science
Scaling
trench gate
Correction
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