深槽Ni(Pt)Si/Si肖特基二极管特性研究

In this paper, Ni(Pt)Si film is formed using the structure Ni/Pt/Ni/Si after the RTP, and the sheet resistance of Ni(Pt)Si film is rather low during 600~850℃. This temperature is 150℃ higher than that of NiSi film. Ni(Pt)Si/Si schottky harrier diode, which goes through 850℃ RTP, has good I-V characteristics. The corresponding Schottky harrier height Φ(subscript B) of 0.71 eV is obtained. We think that the film of Ni (Pt) Si has the better stability than NiSi. The experiment shows that the deep trench to replace guard ring in schottkey diode can greatly increase the reverse breakdown voltage of the device. When the impurity concentration in epitaxial substrate is 5E15 cm^(-3), the breakdown voltage of device with deep trench is up to 80 V, while device with guard ring is only 50 V.