Fabrication of 12×12 matrix-addressed 780 nm oxide-confined VCSEL arrays

Summary form only given. We describe the fabrication process of 12x12 matrix-addressed oxide-confined VCSEL arrays and their characteristics. Complete planarization enabled p(top) and n(bottom) electrodes to be successfully formed across DBR layers whose total thickness is 10 /spl mu/m. As a result, high yield and good uniformity in device performance was achieved. Each VCSEL consists of n and p- semiconductor DBR and MQW active region, which are all AlGaAs 22 /spl mu/m diameter post structure.