Optical characterization and device fabrication of laterally patterned InGaN blue light emitting media on 50 nm scale

Summary form only given. We describe a two-fold approach to produce an arrayed pattern of InGaN/GaN MQW heterostructures by electron beam lithography and by pattern transfer from self-organized porous alumina. Spontaneous emission and light extraction of such subwavelength scale structures have been studied and a pn-junction structure has been fabricated for current injection into the arrays of isolated nanoscale posts.