Field electron emission from amorphous CNx:B films

CN x :B thin films were prepared on titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The analyses indicate that the deposited samples are amorphous CN x :B thin films. Field electron emission characteristics of amorphous CN x :B thin films were measured in a vacuum chamber with a base pressure of about 3.2 X 10 -5 Pa. The turn-on field of the film was 3.5 V/μm. The current density was 60 μA/cm 2 at an electric field of 9 V/μm. The experimental results indicate that this film could be a promising material applicable to cold cathodes.