Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis

This paper analyzes the frequency dependence of the gate transconductance (G(m)) and output conductance (G(d)) of a DTMOS in 0.25 mum PD SOI MOS technology. Our experimental results demonstrate for the first time that DTMOS devices suffer from a strong degradation of G(m) and G(d) around 1 GHz. An equivalent small-signal circuit is proposed to explain the observed phenomena. The model clearly identifies the non-zero value of the body contact resistance as the source of the G(m) and G(d) degradation. DTMOS stays a promising MOS structure for low power, low voltage high frequency applications. (C) 2004 Elsevier Ltd. All rights reserved.