Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells

It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3μm GaInNAs‐based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition, growth temperature dependent changes in the QW morphology are shown to have a significant influence on the transport properties of the structure.