Chemical Vapor Deposition of Copper Thin Film Using a Novel Precursor of Allyloxytrimethylsilyl Hexafluoroacetylacetonate Copper(I)

A new volatile liquid copper precursor of allyloxytrimethylsilyl hexafluoroacetylacetonate copper (I) [Cu(hfac)(aotms)], termed Cypron was studied for the chemical vapor deposition of copper (Cu-CVD) thin films. This precursor has higher vapor pressure and more suitable thermal stability than the previously known trimethylvinylsilyl hexafluoroacetylacetonate copper (I) [Cu(hfac)(tmvs)]. In the presence of water vapor, smooth copper films were obtained with a high deposition rate of about 90 nm/min at a low temperature of 190°C. The resistivity of the films was as low as 1.9µΩcm. The step coverage and filling property of this novel precursor were excellent.