Large scale integration and reliability consideration of triple gate transistors
2004
Large scale integration and reliability of triple gate FETs (TG-FETs) are investigated. The SRAM chip composed of TG-FETs demonstrated 20Mbits of working cells, and 45/spl deg/ rotated TG-FET is found to be superior from reliability perspective. Future TG-FET design is proposed, utilizing technologies including alternating phase shift mask lithography, local-interconnects and metal gate/undoped channel.
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