Role of Low O/sub 2/ Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin Films on Si Substrates

Recently there has been noticeable interest in the fabrication and study of ZnO films for a variety of electrical and optical devices. Reports indicate that the electrical properties of undoped ZnO thin films can be controlled by changing the growth parameters as stated in Ji Nan Zeng et al. (2002) such as: O 2 partial pressure during growth, deposition temperature as well as the fluence of the laser beam. The effects of very low oxygen pressure however have not been well investigated. In this work we have investigated the effect of very low oxygen pressure and deposition temperature during growth on electrical and structural characteristics of PLD grown ZnO films on Si