Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Abstract Indium phosphide, gallium arsenide phosphide, and aluminum indium phosphide have been deposited by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and tertiarybutylarsine. The effects of growth temperature and V/III ratio on the amount of silicon, sulfur, carbon, and oxygen in InP have been determined. Minimum incorporation was observed at 565 °C and a V/III ratio of 32. In this case, the material contained a background carrier concentration of 2.7×10 14  cm −3 , and the Hall mobilities were 4970 and 135,000 cm 2 /V s at 300 and 77 K. The oxygen contamination in AlInP was found to be only 9.0×10 15  cm −3 for deposition at 650 °C and a V/III ratio of 35. The relative distribution of arsenic to phosphorus in GaAs y P 1− y was determined at temperatures between 525 and 575 °C. The distribution coefficient [ ( N As / N P ) film / ( P TBAs / P TBP ) gas ] ranged from 25.4 to 8.4, and exhibited an Arrhenius relationship with an apparent activation energy of 1.2 eV.