HfO2-Al2O3 dielectric layer for a performing metal-ferroelectric-insulator-semiconductor structure with ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin film

José Silva,Koppole C. Sekhar,Katerina Veltruska,Vladimír Matolín,Raluca Negrea,Corneliu Ghica,Marcelo Moizinho Oliveira,Joaquim Agostinho Moreira,Mário A. C. Castro Pereira,M. J. M. Gomes

HfO2-Al2O3 dielectric layer for a performing metal-ferroelectric-insulator-semiconductor structure with ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin film

2020

José Silva
Koppole C. Sekhar
Katerina Veltruska
Vladimír Matolín
Raluca Negrea
Corneliu Ghica
Marcelo Moizinho Oliveira
Joaquim Agostinho Moreira
Mário A. C. Castro Pereira
M. J. M. Gomes

In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are investigated. Moreover, the...

Keywords:

Optoelectronics
Metal
Thin film
Insulator (electricity)
Ferroelectricity
dielectric layer
Materials science
semiconductor structure

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