Old Web
English
Sign In
Acemap
>
Paper
>
Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-all-around FETs
Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-all-around FETs
2021
Zhao Yu
Taku Iwase
Makoto Satake
Hirotaka Hamamura
Keywords:
Plasma etching
Optoelectronics
Front (oceanography)
Materials science
Mechanism (engineering)
Isotropy
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]