Trends in ion implantation technology of semiconductors

The independent control of dose and beam energy offered by ion implantation allows in principle the improvement of several electrical characteristics of devices. A detailed knowledge of the two-dimensional dopant depth profile and of the residual damage is required for a better exploitations of the ion implantation technology. Examples will be presented for channeling and random implants of high energy P and B ions through a mask. Preexting impurities like O and C can interact with the implanted species in several ways. As an illustration of the phenomenon the diffusion of Al implanted into silicon containing different amounts of oxygen will be described in some details, including the out diffusion from the sample and the gettering by oxygen precipitates in the damaged region.