Apparatus for etching of wafer and wafer etching method using the same

PURPOSE: A wafer etching apparatus and a method for etching a wafer using the same are provided to prevent the generation plasma by simultaneously mounting a first plasma unit and a second plasma unit. CONSTITUTION: A process chamber(100) includes a chuck to cool a wafer. A first plasma unit(120) is connected to the process chamber, and cools the wafer with a wide surface at high speed by spraying first etching gas to the process chamber. A second plasma unit(130) removes stress from the wafer, and forms a copper filler by spraying second etching gas to the process chamber. The second plasma unit etches the surface of the wafer with a desired roughness.