Near-surface damage created in silicon by BF2+ implantation

Abstract The near-surface damage in silicon induced by the bombardment of 147 keV BF 2 + has been investigated by 2 MeV He + Rutherford-backscattering spectrometry. The implantation was carried out at room temperature with the ion doses ranging from ~ 10 13 to ~ 10 16 cm −2 . The radiation damage was compared with corresponding B + and F + atomic-ion implantation. A damage enhancement at the surface region of the silicon implanted with BF 2 + has been observed and it is attributed to the multiple-collision effect between molecular ions and host atoms.