The influence of interface strain on magnetization switching process in FeSi/(011) PMN-0.3PT heterostructures

The magnetization switching process of Fe80Si20/[PbMg1/3Nb2/3O3]0.7-[PbTiO3]0.3 (FeSi/PMN-0.3PT) heterostructures under electric fields induced interface strain effects were investigated by magneto-optical Kerr effect. In the as-deposited FeSi films with low four-fold magnetic anisotropy, the one-jump and two-jump loops corresponding to 180o and 90o domain walls were observed and can be regular tuning by applying saturated and converse electric field in those crystalline region. After 300 oC annealing treatment, the heterostructures present the enhanced crystallinity and interface strain effect. By applying impulse electric field, we achieve the reliable and non-volatile two-jump and three-jump magnetization switching transition. Those regulation results further confirm the magnetic anisotropy transition and magnetic energy superposition relationship in FeSi/PMN-0.3PT. The controllable magnetization switching process is significant for understanding the mechanism of magnetic anisotropy competition and designing the relevant magnetoelectric devices.