High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
2017
Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
38
References
738
Citations
NaN
KQI