Amorphization and regrowth in si cosi2 si heterostructures

Reduction of the defect density in the Si overlayer of Si/CoSi2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer‐by‐layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.