AUGER ANALYSIS OF (Al, Ti)N/Si INTERFACE SYNTHESIZED BY ION BEAM ASSISTED DEPOSITION AND OPTIMIZATION OF FILM FORMATION FACTORS

Ternary (Al, Ti)N film were synthesized on silicon substrate by Ion Beam Assisted Deposition (IBAD) method under the conditions of nitrogen ion energy, 2.0 keV, atom transport ratio R 1 = Ti/(Ti+Al) of 0∼1.0 and ion-atom transport ratio R 2 = (Ti+AI)/N of 0.5∼1.5. Auger analysis was performed across the interfaces between (Al, Ti)N films and Si substrates. The satellite peak (Si-N bonds) of Si-LV V was observed for all films as deposition for R 2 = 0.5 ∼1.2, regardless of R 1 values. But the satellite peak disappeared (or decreased) after annealing (Al,Ti)N/Si and TiN/Si interface although the peak remained even after annealing AlN/Si. Also, the optimization of the controlling factors [ R 1 , R 2 ] was described for film properties of hardness and surface roughness.