Analysis of Defects in Devices and Silicon Crystals in Production Lines

With the further miniaturization and higher integration of devices, the cleanliness of Si surface regions where the devices are fabricated is becoming more and more important. In particular, in order to guarantee long holding times for DRAM devices and to improve the reliability of thinner oxide films. It is necessary that the number of defects is reduced as much as possible from the Si surface region [1].