Electrochemical corrosion of silicon carbide ceramics in H2SO4

Abstract Sintered silicon carbide materials have found widespread use due to their high corrosion stability. This corrosion stability can be affected by electrochemical processes. Electrochemical corrosion experiments conducted on a SSiC material in H 2 SO 4 at different voltages and subsequent detailed investigation of the formed surfaces was carried out. The first time a systematic local measurement of the thickness of the oxide layers was carried out. The measurements revealed the formation of SiO 2 surface layers with thickness up to 125 μm. The measured values also showed a strong deviation from grain to grain. The thickness of the layers does not correlate with the crystallographic orientation of the grains or the SiC-polytypes. The data indicate that the behaviour is caused by the variation of the resistivity of the grain boundaries. The measured thicknesses as a function of the electrical charge transferred indicate that the electrochemical oxidation results in the SiO 2 and carbon dioxide.