The design of miniaturized broadband power divider utilizing GaAs-based IPD process and equivalent circuit model

The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to reduce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03×0.98 mm 2 . Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. Moreover the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.