Growth process and growth container of phosphorus-silicon-cadmium single crystal

The invention discloses a process for preparing a phosphorus-silicon-cadmium single crystal. Phosphorus-rich CdSiP2 polycrystal powder serves as a raw material, and the process comprises the steps of (1) cleaning and drying a growth container; (2) loading materials; and (3) placing a double-layer crucible which is filled with growth raw materials and sealed into a three temperature zone tube type crystal growing furnace, heating up a high-temperature zone of the growing furnace and a low-temperature zone of the growing furnace at a speed of 30-60 DEG C/h to 1150-1180 DEG C and 950-1050 DEG C respectively, keeping the temperature, then adjusting the temperature of a gradient zone, enabling the temperature gradient to be 10-20 DEG C/cm, controlling the double-layer crucible to descend at a constant speed of 3-6mm/day when heat preservation of growth raw materials in the high-temperature zone lasts for 12-36h, stopping the descending of the crucible after the double-layer crucible descends to the low-temperature zone and single crystal growth is finished, preserving the heat in the low-temperature zone for 24-72h, and cooling the high-temperature zone, the gradient temperature zone and the low-temperature zone to the room temperature simultaneously at a speed of 20-60 DEG C/h after the heat preservation time expires. The single crystal growth container is composed of an inner layer crucible and an outer layer crucible, wherein the CdSiP2 polycrystal powder which is used for regulating pressure is added inside a circular cavity between the inner layer crucible and the outer layer crucible.