Implantation damage and anomalous diffusion of implanted boron in silicon

The anomalous diffusion of implanted boron in silicon damaged by self‐implantation has been investigated by cross‐section transmission electron microscopy and secondary‐ion mass spectroscopy. During rapid thermal annealing, bulges in the boron profile are observed at the edges of the defected band and the profile broadening is accompanied by the shrinking of the band. The decay time became unobvious due to the emission of point defects from the edges of the defected band. It is suggested that the anomalous diffusion of boron is related to the point defects produced by implantation and emitted from the defected band.