Experiments on gas cooling of wafers
1981
Abstract The temperatures reached by wafers during implantation can be high enough to destroy resist materials and higher temperatures can cause partial annealing in silicon. This paper examines the applicability of gas cooling of the wafer backside and presents data showing that very effective cooling can be provided with a heat transfer coefficient of between 20–50 mW cm −2 C −1 depending on the gas used.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
13
Citations
NaN
KQI