TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
2015
This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.
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