Effect of photodecomposed-PH3 treatment on PN/InP metal–insulator–semiconductor diodes

The effect of photodecomposed phosphine (PD-PH 3 ) treatment on the interfacial properties of phosphorus nitride/indium phosphide (PN/InP) metal-insulator-semiconductor (MIS) structures has been investigated. It is demonstrated that PD-PH 3 treatment is effective in reducing the interface state density for PN/InP MIS diodes fabricated by photochemical vapour deposition (photo-CVD). An interface state density as low as 3.1×10 11 eV -1 cm -2 is achieved by an in situ photoprocess consisting of PD-PH 3 treatment and subsequent PN deposition