Field-Assisted Switching of Free-Layer Magnetization in Magnetic Tunnel Junctions

We investigate the switching of electric-field (EF)-controlled magnetic tunneling junction free layer (FL) magnetization assisted by Oersted fields using micromagnetic simulations. The effects of several physical parameters, such as damping constant, magnetic anisotropy, as well as the EF efficiency and the applied Oersted fields on the switching of the FL magnetization are examined. Successful and reliable magnetization switching depends on all these parameters. The switching time is mainly determined by the time required for the magnetization of the FL to turn in-plane due to the demagnetizing field created after applying the EF.