Bipolar LSIs using Array Transistors and Flexible U-grooves.

We have developed a new device structure for high-performance and high-power mixed signal LSIs using 0.35 pm SO1 complementary bipolar transistors. New structure is composed of array transistors for various operating currents and flexible U-groove layout for high-power transistors. Thermal simulation and test structure measurements showed the advantage of the new structure quantitatively.