A method of manufacturing a transistor with a high-k gate dielectric

A method of manufacturing a transistor with a high-k gate dielectric comprising the steps of: - providing a semiconductor substrate with a channel region, - selectively applying a sacrificial layer on the semiconductor substrate in the channel region, - forming a gate electrode over the sacrificial layer and a source and a drain in the semiconductor substrate on both sides of the channel region, - removal of the sacrificial layer over the channel region under the gate electrode, and - depositing a high-k gate dielectric layer at least above the channel region under the gate electrode.