Characteristics of erbium implants in silicon‐on‐insulator

The characteristics of erbium implants in a silicon‐on‐insulator structure were studied by photoluminescence and electrical activation measurements. The results indicate that a correlation exists between the luminescence energy or the lattice configuration and the electrical activation of the erbium in the implanted materials. Meanwhile, this work suggests a new way to enhance the luminescence efficiency of the erbium implanted materials.