Hot-spot detection and correction using full-chip based process window analysis

In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning (DFP) using a commercial OPC tool. Exposure latitude and dose sensitivity value represent image log slope (ILS) while DOF represents critical dimension variation at a defocused condition.