A METHOD OF HIGHLY EFFICIENT HYDROLYZATION OXIDATION OF III-V SEMICONDUCTOR LATTICE MATCHED TO INDIUM PHOSPHIDE

We have demonstrated a method of efficient wet oxidation process for devices grown on indium phosphide. It was found that oxidation of a strain compensated InAs/AlAs short-period superlattice grown on InP proceeds at a rate of 0.28 μm/min. An edge-emitting laser using current confinement provided by the oxide has been fabricated. This method might be also well suited for long wavelength vertical cavity surface emitting laser application.