Photoluminescence and structural analysis of terbium doped porous silicon

Porous silicon (PS) doped with terbium (Tb 3+ ) has been prepared by impregnation of PS layers with chloride solution of terbium. The dependency of photoluminescence (PL) intensity on the Tb 3+ concentration has been studied. Rutherford Back-scattering Spectrometry (RBS) spectra indicate clearly a total and uniform penetration of rare earth into the PS layers at all different percentages. PL spectra show an increase of the intensity of both Tb 3+ peaks and PS band when the concentration of TbCl 3 solution increases. The PL mechanism is discussed through time-resolved photoluminescence measurements, and in relation with thermal treatment effects. Transmission Electron Microscopy (TEM) technique has also been used to analyse the structure of this nanocomposite material.