Multifunctional discharge system for low temperature formation of carbon nanostructures

Modern technologies of precise materials etching use normally the single-discharge systems, e.g., inductively or capacitively coupled plasmas. The energy of ion flux onto the substrate in these systems is controlled by the rf biasing of the substrate holder, such as in dual or triple frequency capacitive discharges [1]. This method, being based on alteration of characteristics of the sheath around the substrate, does not permit to vary the ion energies in a sufficiently broad range.