A metal-oxide-semiconductor devices reliability assessing method based on physics of failure

With the development of Metal-Oxide-Semiconductor (MOS) devices, reliability is becoming a key differentiator in a competitive market. Considering the different stress types and levels during application, an algorithm is proposed to evaluate the reliability of MOS devices under complicated operation conditions. This algorithm is based on the theories of Physics of Failure (PoF). Failure modes, mechanisms and effects analysis is conducted to achieve the potential failure mechanisms and physics models. Then through modeling and simulation, thermal, mechanical and electrical parameters of MOS devices under different conditions are obtained. Using the physics models, cumulative damage theory and random sampling algorithm, the matrix of time to failure of each unit is taken. At last, competing failure model is applied to acquire the time to failure of MOS devices in working condition. The algorithm provides a new approach based on PoF for evaluating the reliability of MOS devices under complex environments.