Research of SIR filter based on integrated passive device technology

This paper presents a third order coupled bandpass filter using integrated passive device technology and SIR architecture. The filter is based on the semiconductor wafer IPD process, using thin film technique and photolithography technology, combined with the advantages of high harmonic suppression of the SIR. Compared with passive device process such as LTCC (low temperature co-fired ceramic), this filter has a smaller volume and higher degree of integration. The results show the filter only occupies the area of 1.4mm × 0.8mm.The bandpass filter exhibits low insertion loss around 1.5dB, the return loss around 20dB, center frequency at 5.96GHz. The passband voltage standing wave ratio (VSWR) is less than 1.5.