Static random access memory structure

The invention discloses a static random access memory structure. The static random access memory structure comprises 1, a memory zone which comprises a first memory node and a second memory node complementary with the first memory node, 2, a reading zone in which a grid electrode of a first reading pass transistor and a grid electrode of a second reading pass transistor are electrically connected to a reading word line, a drain electrode and a source electrode of the first reading pass transistor are respectively electrically connected to a first reading bit line and the first memory node and a drain electrode and a source electrode of the second reading pass transistor are respectively electrically connected to a second reading bit line and the second memory node, and 3, a writing zone in which a grid electrode of a first writing pass transistor and a grid electrode of a second writing pass transistor are electrically connected to a writing word line, a drain electrode and a source electrode of the first writing pass transistor are respectively electrically connected to a first writing bit line and the first memory node and a drain electrode and a source electrode of the second writing pass transistor are respectively electrically connected to a second writing bit line and the second memory node. The static random access memory structure has high reading and writing stability.