Quasi-bound Electronic States in Multiple Delta-doped Quantum Wells

Multiple delta-doped quantum wells of n-type (Si doped GaAs) and p-type (Be doped GaAs) are studied theoretically looking for quasi-bound electron and hole states. The existence of these states and their strong energy and spatial localizations are demonstrated. The line-width and the mean life time are calculated. The FWHM is less than 10 i11 eV (10 i9 eV) and the corresponding mean life time is greater than 10 i5 s (10 i7 s) for n- (p-) type wells respectively. A strong spatial localization is observed in both cases.