Temperature Performance of Meander-Type Inductor in Silicon Technology

In this paper, an inductor of meander topology is designed using Cadence integrated circuit toolchain. The structure is fabricated using a 130 nm standard CMOS technology node. Characterization is performed at frequencies up to 35 GHz and at temperatures of 20°C, 50°C and 80°C. For the experiment an RF probe station with a temperature controllable chuck has been used. The results this set-up yielded include inductance, Q-factor and parasitic resistance behavior versus temperature. Meander topology temperature performance is presented and discussed.