An embedded flash memory production method

The present invention discloses a method for manufacturing an embedded flash memory, comprising, providing a semiconductor substrate, the semiconductor substrate having a flash memory cell region and the logic circuit region; depositing a gate material layer on said semiconductor substrate; the BARC and the first photoresist layer is formed on the gate material layer; removing the logic circuit is located in the region of the first resist layer; and the processing of the flash memory cell region located in the first lithography subbing layer and the bottom antireflective coating is in the logic circuit area to form a barrier layer on a surface of the first photoresist layer and the BARC; forming a first barrier layer on the two photoresist layer. The production method proposed by the invention embedded flash, to avoid the process logic gate is formed in a loop damage to the control gates of flash memory cell region, to improve the overall performance of embedded flash and embedded flash yield.