Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance

The paper reported a thermosensitive material based on tellurium nanoparticle-decorated silicon nanowires with large negative temperature coefficient of resistance. In the fabrication progress, silicon nanowires were etched with HF to get hydrogen-terminated ones, which could reduce TeO32− ion to form Te-modified silicon nanowires. Such Te-modified silicon nanowires showed good temperature-dependent performance as a linear relationship between resistivity and temperature in the range from 30 to 100 °C with high negative temperature coefficient of resistance being 8.2 × 10−3 °C−1.