Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Abstract The paper describes the method to grow homogeneous In x Ga 1− x Sb ternary alloy bulk crystals. The In x Ga 1− x Sb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In 0.8 Ga 0.2 Sb and In 0.6 Ga 0.4 Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 °C/h, respectively.