Deposition of potential Y2−xBixO3 buffer layers for YBCO coated conductor

Abstract Potential Y 2− x Bi x O 3 ( x  = 0.8, 0.9, 1, 1.1, and 1.2) buffer layer for YBCO coated conductor has been deposited on the LaAlO 3 (1 0 0) substrate via a chemical solution deposition route. For the sample with x  = 1, which has the best lattice match with YBCO, YBCO thin film has been deposited using MOD method. XRD θ –2 θ scan reveals an excellent c -axis alignment for both Y 2− x Bi x O 3 and YBCO. ϕ -scan and ω -scan show good in-plane and out-of-plane texture for both YBiO 3 and YBCO layer. A dense, homogeneous, pinhole-free and crack-free morphology has been observed for Y 2− x Bi x O 3 through ESEM images. Influence of thermal process on the epitaxial growth as well as the microstructure of the deposited buffer layer has been discussed. The dense and smooth YBCO film exhibit a sharp superconducting transition at around 90 K as well as a J c  > 2 MA/cm 2 at 77 K and self-field. This work offers a new approach to search for better lattice matched buffer layer materials for YBCO or even REBCO.