Capacitance method for determination of LDD MOSFET geometrical parameters
1992
Abstract A simple capacitance method for determination of feature sizes in LDD devices is presented. It is based on direct measurement of the intrinsic MOS capacitances using a suitable multitransistor test structure. Experimental results for conventional and inverse T , lightly-doped drain MOSTs with 1.5 μm drawn channel length are shown.
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