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Acemap > Paper > 制御層シリコンの自己制限蒸着によるIn0.53Ga0.47As(001)‐(2×4)とSi0.5Ge0.5(110)表面不動態化【Powered by NICT】

制御層シリコンの自己制限蒸着によるIn0.53Ga0.47As(001)‐(2×4)とSi0.5Ge0.5(110)表面不動態化【Powered by NICT】

2016 
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