Characterization of Si pixel detectors of different thickness

Abstract Tests on silicon pixel detector in the mammographic energy range have shown good imaging performances so, in order to improve the efficiency in this energy range, we have designed thicker detectors of the p + /n type. The detectors have been fabricated by ITC-IRST (Trento, Italy) in high resistivity silicon substrates (300 and 525 μm thick). A TCAD simulation work has been carried out to optimize the electric field distribution and to enhance the breakdown voltage. Very low leakage current and high breakdown voltage characteristics have been measured on detectors in preliminary on-wafer tests. After that, detectors have been bump-bonded to a dedicated VLSI electronic chips, realizing an assembly. Choosing the best set-up condition and using a standard mammographic tube, we have acquired a large area image (8×8 cm 2 ) of the RMI 156 phantom, recommended for mammographic quality checks. In order to cover the whole surface, we have acquired different images translating the phantom over the assembly. We present some selected results for these assemblies both for the electrical characteristics and for the imaging performances.